Research conducted in the Bent Group, in collaboration with the Semiconductor Research Corporation, was highlighted in an article published by Business Wire.

The article, which can be found here, highlights the work of Fatemeh Hashemi, who has been studying the use of area selective atomic layer deposition for use in electronic devices. "Our technology is a promising candidate for overcoming the challenges of top-down processing and misalignment because it greatly improves the ability to perform selective deposition of materials. This research introduces a novel processing method to meet the increasingly difficult materials challenges associated with new devices," says Stacey F. Bent. In the future, effort will be focused on making progress towards integrating the technique into existing manufacturing processes. Learn more about this area on our research page.