Recent Publications

(in reverse chronological order)

Skip to another year:

Download the complete publication list here.

"Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide," A. J. M. Mackus, C. MacIsaac, W. H. Kim and S. F. Bent, J. Chem. Phys., 146 (2017) 052802, 10.1063/1.4961459.

"Buffer layer point contacts for CIGS solar cells using nanosphere lithography and atomic layer deposition," A. Hultqvist, T. Sone, and S. F. Bent, IEEE Journal of Photovoltaics, 7 (2017) 322-328, 10.1109/JPHOTOV.2016.2627621.

"Growth, intermixing and surface phase formation for zinc tin oxide nanolaminates produced by atomic layer deposition," C. Hägglund, T. Grehl, J. T. Tanskanen, Y. Yee, M. N. Mullings, A. J. M. Mackus, C. MacIsaac, B. M. Clemens, H. H. Brongersma and S. F. Bent, J. Vac. Sci. Technol. A, 34 (2016) 021516, doi: 10.1116/1.4941411 [Editor's Pick].

"Strong coupling of plasmon and nanocavity modes for dual band, near-perfect absorbers and ultrathin photovoltaics," C. Hägglund, G. Zeltzer, R. Ruiz, A. Wangperawong, K. E. Roelofs, and S. F. Bent, ACS Photonics, 3 (2016) 456-463, 10.1021/acsphotonics.5b00651.

"On the intrinsic selectivity and structure sensitivity of rhodium catalysts for C2+ oxygenate production," N. Yang, A. J. Medford, X. Liu, F. Studt, T. Bligaard, S. F. Bent, and J. K. Nørskov, J. Am. Chem. Soc., 138 (2016) 3705-3714, 10.1021/jacs.5b12087.

"A process for topographically-selective deposition on 3D nanostructures by ion implantation," W. H. Kim, F. S. Minaye Hashemi, A. J. M. Mackus, J. Singh, Y. Kim, D. Bobb-Semple, Y. Fan, T. Kaufman-Osborn, L. Godet, and S. F. Bent, ACS Nano, 10 (2016) 4451-4458, 10.1021/acsnano.6b00094.

"Tailoring mixed-halide, wide-gap perovskites via multi-step conversion process," D. Bae, A. Palmstrom, K. E. Roelofs, Bastian Timo Mei, Ib Chorkendorff, S. F. Bent, and P. C. K. Vesborg, ACS Appl. Mat. Interfac., 8 (2016) 14301-14306, 10.1021/acsami.6b01246.

"Impact of conformality and crystallinity for ultra-thin 4 nm compact TiO2 layers in perovskite solar cells," K. E. Roelofs, V. L. Pool, D. A. Bobb-Semple, A. F. Palmstrom, P. K. Santra, D. G. Van Campen, M. F. Toney, and S. F. Bent, Adv. Mater. Interfaces, 1600580 (2016), 10.1002/admi.201600580.

"Sequential regeneration of self assembled monolayers for highly selective atomic layer deposition," F. S. Minaye Hashemi and S. F. Bent, Adv. Mater. Interfaces, 1600464 (2016) 10.1002/admi.201600464.

"Molecular ligands control superlattice structure and crystallite orientation in colloidal quantum dot solids," P. K. Santra, A. F. Palmstrom, C. J. Tassone, and S. F. Bent, Chem. Mat., 28 (2016) 7072-7081, 10.1021/acs.chemmater.6b03076.

"Selective deposition of dielectrics: limits and advantages of alkanethiol blocking agents on metal-dielectric patterns," F. S. Minaye Hashemi, B. R. Birchansky and S. F. Bent, ACS Appl. Mat. Interfaces, in press (2016) 10.1021/acsami.6b09960.

"Tandem core-shell Si-Ta3N5 photoanodes for photoelectrochemical water splitting," I. Narkeviciute, P. Chakthranont, A. J. M. Mackus, C. Hahn, B. Pinaud, S. F. Bent, and T. Jaramillo, Nano Lett, in press (2016) 10.1021/acs.nanolett.6b03408.

"Perovskite-perovskite tandem photovoltaics with ideal bandgaps," G. E. Eperon, T. Leijtens, K. A. Bush, R. Prasanna, T. Green, J. T. W. Wang, D. P. McMeekin, G. Volonakis, R. L. Milot, R. May, A. Palmstrom, D. J. Slotcavage, R. A. Belisle, J. B. Patel, E. S. Parrott, R. J. Sutton, W. Ma, F. Moghadam, B. Conings, A. Babayigit, H.-G. Boyen, S. Bent, F. Giustino, L. M. Herz, M. B. Johnston, M. D. McGehee and H. J. Snaith, Science (2016) 10.1126/science.aaf9717.

"23.6%-Efficient monolithic perovskite/silicon tandem solar cells with improved stability," K. A. Bush, A. F. Palmstrom, Z. J. Yu, M. Boccard, R. Cheacharoen, J. P. Mailoa, D. P. McMeekin, R. L. Z. Hoye, C. D. Bailie, T. Leijtens, I. M. Peters, M. C. Minichetti, N. Rolston, R. Prasanna, S. Sofia, D. Harwood, W. Ma, F. Moghadam, H. J. Snaith, T. Buonassisi, Z. C. Holman, S. F. Bent, and M. D. McGehee, Nature Energy, accepted (Dec 2016).

"Nanoengineering heterogeneous catalysts by atomic layer deposition," J. A. Singh, N. Yang, and S. F. Bent, Annual Reviews of Chemical and Biomolecular Engineering, in press (2016).

"Polysulfide ligand exchange on zinc sulfide nanocrystal surfaces for improved film formation," S. M. Herron, Q. O. Lawal, and S. F Bent, Appl. Surf. Sci., 359 (2015) 106-113, 10.1016/j.apsusc.2015.10.059.

"Quantifying geometric strain at the PbS QD-TiO2 anode interface and its effect on electronic structures," O. Trejo, K. E. Roelofs, M. Logar, R. Sarangi, D. Nordlund, A. Dadlani, R. Kravec, N. P. Dasgupta, S. F. Bent, and F. B. Prinz, Nano Lett., 15 (2015) 7829-7836, doi:10.1021/acs.nanolett.5b02373.

"Deep recombination centers in Cu2ZnSnSe4 revealed by screened-exchange hybrid density functional theory," Y. Yee, B. Magyari-Köpe, Y. Nishi, S. F. Bent, and B. M. Clemens, Phys. Rev. B, 92 (2015) 195201, 10.1103/PhysRevB.92.195201.

"Formation of continuous Pt films on the graphite surface by atomic layer deposition with reactive O3," H. B. R. Lee and S. F. Bent, Chem. Mat. (2015) dx.doi.org/10.1021/acs.chemmater.5b03076.

"Self-correcting process for high quality patterning by atomic layer deposition," F. S. Minaye Hashemi, C. Prasittichai, and S. F. Bent, ACS Nano, 9 (2015) 8710-8717, dx.doi.org/10.1021/acsnano.5b03125.

"Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers," A. Hultqvist, J. V. Li, D. Kuciauskas, P. Dippo, M. A. Contreras, D. H. Levi, and S. F. Bent, Appl. Phys. Lett., 107, (2015) 033906:1-5, dx.doi.org/10.1063/1.4927096.

"Increased quantum dot loading by pH control reduces interfacial recombination in quantum-dot-sensitized solar cells," K. E. Roelofs, S. M. Herron, and S. F. Bent, ACS Nano, 9 (2015) 8321-8334, dx.doi.org/10.1021/acsnano.5b02853.

"Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties," A. F. Palmstrom, P. K. Santra and S. F. Bent, Nanoscale, 7 (2015) 12266 - 12283, DOI: 10.1039/c5nr02080h, Invited Feature Article.

"Creating highly active atomic layer deposited NiO electrocatalysts for the oxygen evolution reaction," K. L. Pickrahn, N. Yang, C. F. Dickens, A. L. Strickler, and S. F. Bent, Adv. Energy Mat., (2015) 1500412, DOI: 10.1002/aenm.201500412.

"Adsorption of heterobifunctional 4-nitrophenol on the Ge(100)-2x1 surface," B. Shong, T. R. Hellstern, and S. F. Bent, Surf. Sci. (2015), DOI: 10.1016/j.susc.2015.04.007.

"Applications of ALD MnO to electrochemical and photoelectrochemical water splitting," K. L. Pickrahn, Y. Gorlin, L. Seitz, A. Garg, D. Nordlund, T. F. Jaramillo, and S. F. Bent, Phys. Chem. Chem. Phys., 17 (2015) 14003 - 14011, DOI: 10.1039/c5cp00843c.

"Unidirectional adsorption of bifunctional 1,4-phenylene diisocyanide on the Ge(100)-2x1 surface," B. Shong, T. E. Sandoval, A. Crow, and S. F. Bent, J. Phys. Chem. Lett., 6 (2015) 1037-1041, DOI: 10.1021/acs.jpclett.5b00098.

"Improving performance in colloidal quantum dot solar cells by tuning band alignment through surface dipole moments," P. K. Santra, A. F. Palmstrom, J. T. Tanskanen, N. Yang and S. F. Bent, J. Phys. Chem. C, 119 (2015) 2996-3005, DOI: 10.1021/acs.jpcc.5b00341.

"ALD of ultra-thin ternary oxide electrocatalysts for water splitting," K. L. Pickrahn, A. Garg, and S. F. Bent, ACS Catalysis, 5 (2015) 1609-1616, doi:10.1021/cs501532b.

"Highly textured tin(II) sulfide thin films formed from sheet-like nanocrystal inks," S. M. Herron, J. T. Tanskanen, K. E. Roelofs, and S. F. Bent, Chem. Mat., 26 (2014) 7106-7113, dx.doi.org/10.1021/cm503666y.

"Improving area-selective molecular layer deposition by selective SAM removal," C. Prasittichai, K. L. Pickrahn , F. S. M. Hashemi, D. Bergsman and S. F. Bent, ACS Appl. Mater. Interfaces, 6 (2014) 17831-17836, dx.doi.org/10.1021/am504441e.

"Bifacial solar cell with SnS absorber by vapor transport deposition," A. Wangperawong, P. C. Hsu, Y. Yee, S. M. Herron, B. M. Clemens, Y. Cui, and S. F. Bent, Appl. Phys. Lett., 105 (2014) 173904:1-4, 10.1063/1.4898092.

"Coverage-dependent adsorption of bifunctional molecules: detailed insights into interactions between adsorbates," B. Shong, R. Y. Brogaard, T. E. Sandoval, and S. F. Bent,J. Phys. Chem. C.,118 (2014) 23811-23820, dx.doi.org/10.1021/jp507349k.

"Thermally activated reactions of nitrobenzene at the Ge(100)-2 x 1 surface," B. Shong and S. F. Bent, J. Phys. Chem. C., 118 (2014) 29224-29233, 10.1021/jp505352k.

"Structural evolution of platinum thin films grown by atomic layer deposition," S. M. Geyer, R. Methaapanon, R. W. Johnson, S. Brennan, M. F. Toney, B. M. Clemens, and S. F. Bent, J. Appl. Phys., 116 (2014) 064905, dx.doi.org/10.1063/1.4892104.

"Effect of O3 on growth of Pt by atomic layer deposition," H. B. R. Lee, K. L. Pickrahn, and S. F. Bent, J. Phys. Chem. C, 118 (2014) 12325-12332, dx.doi.org/10.1021/jp502596n.

"Atomic layer deposition of metal at graphene line defects," K. Kim, H. B. R. Lee, R. W. Johnson, J. T. Tanskanen, N. Liu, M. G. Kim, C. Pang, C. Ahn, S. F. Bent, and Z. Bao, Nature Commun., 5:4781 (2014), 10.1038/ncomms5781.

"Nanostructuring materials for solar-to-hydrogen conversion," T. Gür, S. F. Bent, and F. B. Prinz, J. Phys. Chem., Invited Feature Article, 118 (2014) 21301-21315, dx.doi.org/10.1021/jp500966u.

"A new resist for area selective atomic and molecular layer deposition on metal-dielectric patterns," F. S. M. Hashemi, C. Prasittichai, and S. F. Bent, J. Phys. Chem. C, 118 (2014) 10957-10962, dx.doi.org/10.1021/jp502669f.

"Strong carbon-surface dative bond formation by tert-butyl isocyanide on the Ge(100)-2 x 1 surface," B. Shong, K. T. Wong and S. F. Bent, JACS Communication, 136 (2014) 5848-5851, dx.doi.org/10.1021/ja500742a.

"An atomic layer deposition chamber for in situ X-ray diffraction and scattering analysis," S. M. Geyer, R. Methaapanon, R. W. Johnson, D. G. Van Campen, A. Metha, and S. F. Bent, Rev. Sci. Instrum., 85 (2014) 055116, http://dx.doi.org/10.1063/1.4876484.

"From atomic layers to state of the art materials," R. W. Johnson, A. Hultqvist, and S. F. Bent, Materials Today, 17 (2014) 236-246, dx.doi.org/10.1016/j.mattod.2014.04.026.

"Correlating growth characteristics in atomic layer deposition with precursor molecular structure: the case of zinc tin oxide," J. T. Tanskanen, C. Hägglund, and S. F. Bent, Chem. Mat. 556 (2014) 186-194, dx.doi.org/10.1021/cm403913r.

"Interface engineering in inorganic-absorber nanostructured solar cells," K. E. Roelofs, T. P. Brennan, and S. F. Bent, J. Phys. Chem. Lett., Invited Perspective article, 5 (2014) 348-360. dx.doi.org/10.1021/jz4023656

"Thin film characterization of zinc tin oxide deposited by thermal atomic layer deposition," M. N. Mullings, C. Hägglund, J. T. Tanskanen, Y. Yee, S. Geyer, and S. F. Bent, Thin Solid Films, 556 (2014) 186-194

"Nanoscale Limitations in Metal Oxide Electrocatalysts for Oxygen Evolution," V. Viswanathan, K. L. Pickrahn, A. C. Luntz, S. F. Bent, and J. K. Nørskov, Nano Letters, 14 (2014), 5853-5857 DOI: 10.1021/nl502775u.

"Formation of stable nitrene surface species by reaction of adsorbed phenyl isocyanate at the Ge(100)-2x1 surface," K. T. Wong, J. T. Tanskanen and S. F. Bent, Langmuir, 29 (2013) 15842-15850. dx.doi.org/10.1021/la4036216

"Ultrathin light absorbers based on plasmonic nanocomposites," C. Hägglund and S. F. Bent, SPIE Newsroom, 10.1117/2.1201309.005135.

"Adsorption of trimethyl phosphite at the Ge(100)-2x1 surface by nucleophilic reaction," K. T. Wong, B. S. Shong, W. Sun, and S. F. Bent, J. Phys. Chem. C, 117 (2013) 26628-26635. dx.doi.org/10.1021/jp408538e

"Area selective molecular layer deposition of polyurea films," C. Prasittichai, H. Zhou, and S. F. Bent, ACS Appl. Mater. Interfaces, 5 (24), (2013) 13391-13396. dx.doi.org/10.1021/am4043195

"TiO2 conduction band modulation with In2O3 recombination barrier layers in solid-state dye-sensitized solar cells," T. P. Brennan, J. T. Tanskanen, K. E. Roelofs, J. To, W. H. Nguyen, J. R. Bakke, I-K. Ding, B. E. Hardin, A. Sellinger, M. D. McGehee, and S. F. Bent, J. Phys. Chem. C, 117 (2013) 24138-24149. dx.doi.org/10.1021/jp406789k

"The dynamical orientation of large molecules on oxide surfaces and its implications for dye-sensitized solar cells," T. P. Brennan, J. T. Tanskanen, J. R. Bakke, W. H. Nguyen, D. Nordlund, M. F. Toney, M. D. McGehee, A. Sellinger, and S. F. Bent, Chem. Mat., 25 (2013) 4354-4363. dx.doi.org/10.1021/cm402609k

"Insights into the surface chemistry of tin oxide atomic layer deposition from quantum chemical calculations," J. T. Tanskanen and S. F. Bent, J. Phys. Chem. C, 117 (2013) 19056-19062. dx.doi.org/10.1021/jp4063324.

"Adsorption of structural and stereoisomers of cyclohexanediamine at the Ge(100)-2 x 1 surface: geometric e?ects in adsorption on a semiconductor surface," K. T. Wong and S. F. Bent, J. Phys. Chem.

C, 117 (2013) 19063-19073. dx.doi.org/10.1021/jp406423n

"Highly stable ultrathin carbosiloxane films by molecular layer deposition," H. Zhou and S. F. Bent, J. Phys. Chem. C, 117 (2013) 19967-19973. dx.doi.org/10.1021/jp4058725

"Vapor transport deposition and epitaxy of orthorhombic SnS on glass and NaCl substrates," A. Wangperawong, S. M. Herron, R. R. Runser, C. Hägglund, J. Tanskanen, H. B. R. Lee, B. M. Clemens, and S. F. Bent, Appl. Phys. Lett, 103 (2013) 052105, http://dx.doi.org/10.1063/1.4816746.

"Size dependent effects in nucleation of Ru and Ru oxide thin films by atomic layer deposition measured by synchrotron radiation x-ray diffraction," R. Methaapanon, S. M. Geyer, S. Brennan and S. F. Bent, Chem. Mat., 25 (2013) 58-3463. dx.doi.org/10.1021/cm401585k.

"Cross-linked ultrathin polyurea films via molecular layer deposition," H. Zhou, M. F. Toney, and S. F. Bent, Macromolecules, 46 (2013) 5638-5643, dx.doi.org/10.1021/ma400998m.

"Self-assembly based plasmonic arrays tuned by atomic layer deposition for extreme visible light absorption," C. Hägglund, G. Zeltzer, R. Ruiz, I. Thomann, H. B. R. Lee, M. L. Brongersma and S. F. Bent, Nano Letters, 13 (2013) 3352-3357, DOI: 10.1021/nl401641v.

"Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water," M. N. Mullings, C. Hagglund and S. F. Bent, J. Vac. Sci. Technol. A, 31 (2013) 061503, DOI http://dx.doi.org/10.1116/1.4812717 [Top 20 Most Downloaded Article in July 2013].

"Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer," T. P. Brennan,* O. Trejo,* K. E. Roelofs, J. Xu, F. B. Prinz, and S. F. Bent, Journal of Materials Chemistry A Communication, 1 (2013) 7566-7571, DOI: 10.1039/c3ta10903h.

"Semiconductor surface functionalization for advances in electronics, energy conversion, and dynamic systems," A. V. Teplyakov and S. F. Bent, J. Vac. Sci. Technol. A, invited review, 31 (2013) 050810; doi: 10.1116/1.4810784 [Top 20 Most Downloaded Article in June 2013].

"Fabrication of organic interfacial layers by molecular layer deposition: present status and future opportunities," H. Zhou and S. F. Bent, J. Vac. Sci. Technol., invited review, 31 (2013) 040801; doi: 10.1116/1.4804609 [Top 20 Most Downloaded Article in June, July, and August 2013].

"Competing geometric and electronic effects in adsorption of phenylenediamine structural isomers on the Ge(100)-2x1 surface," J. S. Kachian, K. H. Squires and S. F. Bent, Surface Science, 615 (2013) 72-79, http://dx.doi.org/10.1016/j.susc.2013.03.024.

"Highly sensitive, patternable organic films at the nanoscale made by bottom-up assembly," H. Zhou, J. M. Blackwell, H. B. R. Lee and S. F. Bent, ACS Applied Materials & Interfaces, 5 (9) (2013) 3691-3696. doi 10.1021/am4002887.

"Effect of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state CdS quantum dot-sensitized solar cells," K. E. Roelofs, T. P. Brennan, J. C. Dominguez, C. D. Bailie, G. Y. Margulis, E. T. Hoke, M. D. McGehee, and S. F. Bent, J. Phys. Chem. C, 117 (2013) 5584-5592. dx.doi.org/10.1021/jp311846r.

"Growth of Pt nanowires by atomic layer deposition on highly ordered pyrolytic graphite," H. B. R. Lee, S. H. Baeck, T. F. Jaramillo, and S. F. Bent, Nano Letters, 13 (2) (2013) 457-463.

"1D pattern formation of adsorbed molecules on the Ge(100)-2 x 1 surface driven by nearest neighbor effects," B. Shong and S. F. Bent, J. Phys. Chem. C, 117 (2) (2013) 949-955.

"Atomic layer deposition of CdO and CdxZn1-xO films," J. R. Bakke, C. Hägglund, H. J. Jung, R. Sinclair, and S. F. Bent, Materials Chemistry and Physics, 140 (2013) 465-471. http://dx.doi.org/10.1016/j.matchemphys.2013.03.038.

"Portable atomic layer deposition reactor for in situ synchrotron photoemission studies," Methaapanon, S. M. Geyer, C. Hagglund, P. A. Pianetta, S. F. Bent, Rev. Sci. Instrum., 84 (2013) 015104; doi: 10.1063/1.4773230.

"In vacuo photoemission studies of platinum atomic layer deposition using synchrotron radiation," S. M. Geyer, R. Methaapanon, P. A. Pianetta, and S. F. Bent, J. Phys. Chem. Lett., 4 (1) (2013) 176-179, dx.doi.org/10.1021/jz301475z.

"Power losses in bilayer inverted small molecule organic solar cells," C. Trinh, J. R. Bakke, T. P. Brennan, S. F. Bent, F. Navarro, A. Bartynski, and M. E. Thompson, Appl. Phys. Lett., 101 (2012) 233903. http://dx.doi.org/10.1063/1.4769440.

"Dissociative adsorption of dimethyl sulfoxide at the Ge(100)-2x1 surface," K. T. Wong, S. N. Chopra, and S. F. Bent, J. Phys. Chem. C, 116 (2012) 26422-26430, 10.1021/jp309418e.

"The low temperature atomic layer deposition of ruthenium and the effect of oxygen exposure," R. Methaapanon, S. M. Geyer, H. B. R. Lee, and S. F. Bent, J. Mat. Chem., 22 (48) (2012) 25154 - 25160.

"Nucleation-controlled growth of nanoparticles by atomic layer deposition," H. B. R. Lee, M. N. Mullings, X. Jiang, B. M. Clemens, and S. F. Bent, Chem. Mat., 24 (2012) 4051-4059.

"The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye sensitized solar cells," T. P. Brennan, J. R. Bakke, I.-K. Ding, B. E. Hardin, W. H. Nguyen, R. Mondal, C. D. Bailie, G. Y. Margulis, E. T. Hoke, A. Sellinger, M. D. McGehee, and S. F. Bent, Phys. Chem. Chem. Phys, 14 (35) (2012) 12130 - 12140. [Top 25 Most-Read Articles in Q3 2012]

"Single versus dual attachment in the adsorption of diisocyanates at the Ge(100)-2x1 surface," K. T. Wong and S. F. Bent, J. Phys. Chem. C, 116 (2012) 12670-12679.

"TiO2-SnO2:F interfacial electronic structure investigated by soft x-ray absorption spectroscopy," C. X. Kronawitter, M. Kapilashrami. J. R. Bakke, S. F. Bent, C.-H. Chuang, W.-F. Pong, J. Guo, L. Vayssieres, and S. S. Mao, Phys. Rev. B, 85 (2012) 125109.

"Active MnOx electrocatalysts prepared by atomic layer deposition for the oxygen evolution and oxygen reduction reactions," K. L. Pickrahn,* S. W. Park,* Y. Gorlin, H. B. R. Lee, T. F. Jaramillo, and S. F. Bent, Advanced Energy Materials, 2 (2012) 1269-1277.

"Transition in the molecular orientation of phenol adsorbates on the Ge(100)-2x1 surface," B. Shong and S. F. Bent, J. Phys. Chem. C, 116 (2012), 7925-7930.

"Reaction of hydroquinone and p-benzoquinone with the Ge(100)-2x1 surface," B. Shong, K. T. Wong, and S. F. Bent, J. Phys. Chem. C, 116 (2012) 4705-4713.

"Microstructure-dependent nucleation in atomic layer deposition of Pt on TiO2," H. B. R. Lee and S. F. Bent, Chem. Mat., 24 (2012) 279-286.

"Growth characteristics, material properties, and optical properties of zinc oxysulfide films deposited by atomic layer deposition," J. T. Tanskanen, J. R. Bakke, C. Hägglund, T. A. Pakkanen, and S. F. Bent, J. Vac. Sci. Technol. A, 30 (2012) 01A135:1-7.

"Atomic layer deposition of CdS quantum dots for solid-state quantum dot sensitized solar cells," T. P. Brennan, P. Ardalan, H. B. R. Lee, J. R. Bakke, I.-K. Ding, M. D. McGehee, and S. F. Bent, Advanced Energy Materials, 1 (2011) 1169-1175. [Cover Article]

"Electron enrichment in 3d transition metal oxide hetero-nanostructures," C. X. Kronawitter, J. R. Bakke, D. A. Wheeler, W.-C. Wang, C. Chang, B. R. Antoun, J. Z. Zhang, J. Guo, S. F. Bent, S. S. Mao, L. Vayssieres, Nano Letters, 11 (2011) 3855-3861.

"Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition," J. R. Bakke, K. L. Pickrahn, T. P. Brennan, and S. F. Bent, Nanoscale, 3 (2011) 3482. [Top 10 downloaded article in August 2011]

"Three-dimensional nanojunction device model for photovoltaics," A. Wangperawong and S. F. Bent, Appl. Phys. Lett., 98 (2011) 233106:1-3.

"Influence of organozinc ligand design on growth and material properties of ZnS and ZnO deposited by ALD," J. T. Tanskanen, J. R. Bakke, T. A. Pakkanen, and S. F. Bent, J. Vac. Sci. Technol. A, 29 (2011) 031507:1-6.

"Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells," P. Ardalan, T. P. Brennan, J. R. Bakke, H. B. R. Lee, I.-K. Ding, M. D. McGehee, and S. F. Bent, ACS Nano, 5 (2011) 1495-1504. [Most read paper in ACS Nano in March 2011]

"Molecular layer deposition of functional thin films for advanced lithographic patterning," H. Zhou and S. F. Bent, ACS Applied Materials and Interfaces, 3 (2011) 505-511.

"Coverage dependence of glycine adsorption on the Ge(100)-2x1 surface," J. S. Kachian, S. J. Jung, S. Kim, and S. F. Bent, Surface Science, 605 (2011) 760-769.

"Aqueous bath process for deposition of Cu2ZnSnS4 photovoltaic absorbers," A. Wangperawong, J. S. King, S. M. Herron, B. P. Tran, K. Pangan-Okimoto, and S. F. Bent, Thin Solid Films, 519 (2011) 2488-2492.

"Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity," S. F. Bent, J. S. Kachian, J. C. F. Rodríguez-Reyes, A. V. Teplyakov, Proc. Nat. Acad. Sci., 108 (2011) 956-960.

"Disulfide passivation of the Ge(100)-2x1 surface," J. S. Kachian, J. Tannaci, R. J. Wright, T. D. Tilley, and S. F. Bent, Langmuir, 27(1) (2011) 179-186.

"Atomic layer deposition of CdxZn1-xS films," J. R. Bakke, J. T. Tanskanen, H. J. Jung, R. Sinclair and S. F. Bent, Journal of Materials Chemistry, 21 (2011) 743-751.

"Adsorption behavior of bifunctional molecules on Ge(100)-2x1: comparison of mercaptoethanol and mercaptamine," J. S. Kachian and S. F. Bent, J. Phys. Chem. C, 114 (2010) 22230-22236.

"Area selective atomic layer deposition by microcontact printing with a water-soluble polymer," M. N. Mullings, H.-B.-R. Lee, N. Marchack, X. Jiang, Z. Chen, Y. Gorlin, K.-P. Lin, and S. F. Bent, J. Electrochem. Soc., 157 (2010) D600-D604.

"Molecular level insights into atomic layer deposition of CdS by quantum chemical calculations," J. T. Tanskanen, J. R. Bakke, S. F. Bent, and T. A. Pakkanen, J. Phys. Chem., 114 (2010) 16618-16624.

"Deposition of ultra-thin polythiourea films by molecular layer deposition," P. W. Loscutoff, H. B. R. Lee, and S. F. Bent, Chem. Mat., 22 (2010) 5563-5569.

"Reaction of tert-butyl isocyanate and tert-butyl isothiocyanate at the Ge(100)-2x1 surface," P. W. Loscutoff, Keith T. Wong, and S. F. Bent, Surface Science, 604 (2010) 1791-1799.

"Reaction of phenyl isocyanate and phenyl isothiocyanate with the Ge(100)-2x1 surface," P. W. Loscutoff, Keith T. Wong, and S. F. Bent, J. Phys. Chem. C, 33 (2010) 14193-14201.

"Fabrication of organic thin films for copper diffusion barrier layers using molecular layer deposition," P. W. Loscutoff, S. B. Clendenning, and S. F. Bent, Mater. Res. Soc. Symp. Proc., 1249 (2010) F02-03.

"Atomic layer deposition of CdS films," J. R. Bakke, H. J. Jung, J. T. Tanskanen, R. Sinclair and S, F. Bent, Chem. Mat., 22 (2010) 4669-4678

"ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors," J. T. Tanskanen, J. R. Bakke, S, F. Bent, and T. A. Pakkanen, Langmuir, 26 (2010) 11899-11906.

"Comparative study of titanium dioxide atomic layer deposition on silicon dioxide and hydrogen-terminated silicon," R. Methaapanon and S. F. Bent, J. Phys. Chem. C, 114 (2010) 10498-10504.

"Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces," P. Ardalan, Y. Sun, P. Pianetta, C. B. Musgrave, and S. F. Bent, Langmuir, 26 (2010) 8419-8429.

"Atomic layer deposition of ZnS via in situ production of H2S," J. R. Bakke, J. S. King, H. J. Jung, R. Sinclair, and S. F. Bent, Thin Solid Films, 518 (2010) 5400-5408.

"Catalysts with Pt surface coating by atomic layer deposition for solid oxide fuel cells," J. H. Shim, X. Jiang, S. F. Bent and F. B. Prinz, J. Electrochem. Soc., 157 (2010) B793-B797.

"ALD co-deposited and core-shell Ru-Pt catalysts for concentrated methanol oxidation," X. Jiang, T. M. Gür, F. B. Prinz, and S. F. Bent, Chem. Mat., 22 (2010) 3024-3032.

"Periodic trends in organic functionalization of Group IV semiconductor surfaces," Jessica S. Kachian, Keith T. Wong and Stacey F. Bent, Accounts of Chemical Research, Cover Article, 43 (2010) 346-355.

"Sputtered Pt-Ru alloys as catalysts for highly concentrated methanol oxidation," X. Jiang, T. M. Gür, F. B. Prinz, and S. F. Bent, J. Electrochem. Soc., 157 (2010) B314-B319.

"Formation of organic nanoscale laminates and blends by molecular layer deposition," P. W. Loscutoff, H. Zhou, S. B. Clendenning and S. F. Bent, ACS Nano, 4 (2010) 331-341.

"Area-selective ALD with soft lithographic methods: using self-assembled monolayers to direct film deposition," X. Jiang and S. F. Bent, J. Phys. Chem. Feature Article, 113 (2009) 17613-17625.

"Photochemical covalent attachment of alkene-derived monolayers onto hydroxyl-terminated silica," J. ter Maat, R. Regeling, M. Yang, M. N. Mullings, S. F. Bent, and Han Zuilhof, Langmuir, 25 (2009) 11592-11597.

"Controlling atomic layer deposition of TiO2 in aerogels through surface functionalization," S. Ghosal, T. F. Baumann, J. S. King, S. O. Kucheyev, J. Biener, Y. Wang, M. A. Worsley, S. F. Bent, and A. V. Hamza, Chem. Mat., 21 (2009) 1989-1992.

"Sulfur versus oxygen reactivity of organic molecules at the germanium(100)-2x1 surface," J. S. Kachian and S. F. Bent, J. Am. Chem. Soc., 131 (2009) 7005-7015.

"Growth process of polyaniline thin films formed by hot wire chemical vapor deposition," G. A. Zaharias and S. F. Bent, Chemical Vapor Deposition, 15 (2009), 133-141.

"Formation of alkanethiolate self-assembled monolayers at halide-terminated Ge surfaces," P. Ardalan, C. B. Musgrave, and S. F. Bent, Langmuir, 25 (2009), 2013-2025.

"Ultra-low loading Pt nanocatalysts prepared by atomic layer deposition on carbon aerogels," J. S. King, A. Wittstock, J. Biener, S. O. Kucheyev, Y. M. Wang, T. F. Baumann, S. Giri, A. V. Hamza, M. Baeumer, and S. F. Bent, Nano Letters, 8 (2008) 2405-2409.

"Formation of an oxide-free Ge/TiO2 interface by atomic layer deposition on brominated Ge," P. Ardalan, E. R. Pickett, and J. S. Harris, Jr., A. F. Marshall, and S. F. Bent, Appl. Phys. Lett., 92 (2008) 252902.

"Silicon falls into line," S. F. Bent, Nature Nanotechnology, 3 (2008) 185-186. doi:10.1038/nnano.2008.79

"Plasma ash processing solutions for advanced interconnect technology," N.C.M. Fuller, M.A. Worsley, L. Tai, S. Bent, C. Labelle, J. Arnold, T. Dalton, Thin Solid Films, 516 (2008) 3558-3563.

"Application of atomic layer deposition of platinum to solid oxide fuel cells," X. Jiang, H. Huang, F. B. Prinz, and S. F. Bent, Chem. Mat., 20 (2008) 3897-3905.

"Heads or tails: which is more important in molecular self assembly?" S. F. Bent, ACS Nano, 1 (2007) 10-12.

"Area-selective atomic layer deposition of platinum on YSZ substrates using microcontact printed SAMs," X. Jiang and S. F. Bent, J. Electrochem. Soc., 154 (2007) D648-656.

"Spatial control over atomic layer deposition using microcontact printed resists," X. Jiang, R. Chen, and S. F. Bent, Surface and Coatings Technol, 201 (2007) 8799-8807.

"A model neural interface based on functional chemical stimulation," N. Z. Mehenti, H. A. Fishman, and S. F. Bent, Biomedical Microdevices, 9 (2007) 579-586.

"Spatial clues for the enhancement of retinal pigment epithelial cell function in potential implants," C. J. Lee, H. A. Fishman, and S. F. Bent, Biomaterials, 28 (2007) 2192-2201.

"Thermal control of amide product distributions at the Ge(100)-2x1 surface," A. J. Keung, M. A. Filler, and S. F. Bent, J. Phys. Chem. C, 111 (2007) 411-419.

"Carbon oxygen coupling in the reaction of formaldehyde on Ge(100)-2x1," M. A. Filler, C. B. Musgrave, and S. F. Bent, J. Phys. Chem. C., 111 (2007) 1739-1746.

"Thin collagen film scaffolds for retinal epithelial cell culture," J. T. Lu, C. Lee, S. F. Bent, H. A. Fishman, and E. E. Sabelman, Biomaterials, 28 (2007) 1486-1494.

"Effect of radical species density and ion bombardment during ashing of extreme ultra low-k (eULK) inter-level-dielectric (ILD) materials," M. Worsley, S. Bent, N. Fuller, T.-L. Tai, J. Doyle, M. Rothwell, and T. Dalton, J. Appl. Phys., 101 (2007) 013305.

"An ALD resist formed by vapor-deposited self assembled monolayers," J. Hong, D. W. Porter, R. Sreenivasan, P. C. McIntyre, and S. F. Bent, Langmuir, 23 (2007) 1160-1165.

"Area selective atomic layer deposition by soft lithography," R. Chen, H. Kim, D. W. Porter, P. C. McIntyre, and S. F. Bent, Mater. Res. Soc. Symp. Proc., 917 (2006) 0917-E11-05

"Highly stable monolayer resists for atomic layer deposition on germanium and silicon," R. Chen and S. F. Bent, Chem. Mater., 18 (2006) 3733-3741.

"Characterization of neutral species densities in dual-frequency capacitively-coupled photoresist ash plasmas by optical emission actinometry," M. A. Worsley, S. F. Bent, N. C. M. Fuller, and T. Dalton, J. Appl. Phys., 100 (2006) 083301.1-10.

"Chemistry for positive pattern transfer by area-selective atomic layer deposition," R. Chen and S. F. Bent, Adv. Mat., 18 (2006) 1086-1090.

"Detecting free radicals during the hot-wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors," G. A. Zaharias, H. L. Duan, and S. F. Bent, J. Vac. Sci. Technol. A, 24 (2006) 542-549.

"Formation of surface-bound acyl groups by reaction of acyl halides on Ge(100)-2x1," M. A. Filler, A.J. Keung, D. W. Porter, and S. F. Bent, J. Phys.Chem. B, 110 (2006) 4115-4124.

"A model retinal interface based on directed neuronal growth for single cell stimulation," N. Z. Mehenti, G. S. Tsien, T. Leng, H. A. Fishman, and S. F. Bent, Biomedical Microdevices, 8 (2006) 141-150.

"Carboxylic acid chemistry at the Ge(100)-2x1 interface: bidentate bridging structure formation on a semiconductor surface," M. A. Filler, J. Van Deventer, A. Keung, and S. F. Bent, J. Am. Chem. Soc., 128 (2006) 770-779.

"Reactivity of the germanium surface: chemical passivation and functionalization," P. W. Loscutoff and S. F. Bent, Ann. Rev. Phys. Chem., 57 (2006) 467-495.

"Determination of human lens capsule permeability and its feasibility as a replacement for Bruch’s membrane," C. J. Lee, J. A. Vroom, H. A. Fishman, and S. F. Bent, Biomaterials, 27 (2006) 1670-1678.

"Characterization of polyconjugated thin films synthesized by hot wire chemical vapor deposition of aniline," G. A. Zaharias, H. H. Shi, and S. F. Bent, Thin Solid Films, 501 (2006) 341-345.

"Tertiary amide chemistry at the Ge(100)-2x1 surface," A. Keung, M. A. Filler, D. W. Porter, and S. F. Bent, Surf. Sci., 599 (2005) 41-54.

"Ethylenediamine on Ge(100)-2x1: role of interdimer interactions" A. Kim, M. A. Filler, S. Kim, and S. F. Bent, J. Phys. Chem. B, 109 (2005) 19817-19822

"Detection of open or closed porosity in low-? dielectrics by solvent diffusion," M. A. Worsley, M. Roberts, S. F. Bent, S. M. Gates, T. Shaw, W. Volksen, and R. Miller, Microelectronics Engineering, 82/2 (2005) 113-118.

"Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactions," A. Kim, M. A. Filler, S. Kim, and S. F. Bent, J. Am. Chem. Soc., 127 (2005) 6123-6132.

"Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification," R. Chen, D. Porter, H. Kim, P. C. McIntyre, and S. F. Bent, Appl. Phys. Lett., 86 (2005) 191910.

"Effect of plasma interactions with low-k films as a function of porosity, plasma chemistry, and temperature," M. A. Worsley, S. F. Bent, S. M. Gates, N. Fuller, W. Volksen, M. Steen and T. Dalton, J. Vac. Sci. Technol. B 23 (2005) 395.

"The influence of filament material on radical production in hot wire chemical vapor deposition of a-Si:H," H. L. Duan and S. F. Bent, Thin Solid Films, 485 (2005) 126-134.

"Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition," R. Chen, H. Kim, P. C. McIntyre, and S. F. Bent, Chem. Materials, 17 (2005) 536-544.

"A quantum chemistry based statistical mechanical model of hydrogen desorption from Si(100) 2x1, Ge(100) 2x1, and SiGe alloy surfaces," C. Mui, S. F. Bent, and C. B. Musgrave, J. Phys. Chem. B, 108 (2004) 12559-12565.

"Hot wire chemical vapor deposition as a novel synthetic method for electroactive organic thin films," G. A. Zaharias, H. H. Shi, and S. F. Bent, Mater. Res. Soc. Symp. Proc., 816 (2004) I12.9.

"Directed retinal nerve cell growth for use in a retinal prosthesis interface," T. Leng, P. Wu, N. Z. Mehenti, S. F. Bent, M. F. Marmor, M. S. Blumenkranz, and H. A. Fishman, Investigative Ophthalmology and Visual Science, 45 (2004) 4132-4137.

"A density functional theory study on the effect of Ge alloying on hydrogen desorption from SiGe alloy surfaces," C. Mui, S. F. Bent, and C. B. Musgrave, J. Phys. Chem. B, 108 (2004), 6336-6350.

"Controlling area-selective atomic layer deposition of HfO2 dielectric by self-assembled monolayers," R. Chen, H. Kim, P. C. McIntyre, and S. F. Bent, Mater. Res. Soc. Symp. Proc., 811 (2004) 57-62.

"Self-assembled monolayer resist for atomic layer deposition of HfO2 and ZrO2 high-? gate dielectrics," R. Chen, H. Kim, P. C. McIntyre, and S. F. Bent, Appl. Phys. Lett., 84 (2004) 4017-4019.

"Controlling cell adhesion on human tissue by soft lithography," C. J. Lee, M. S. Blumenkranz, H. A. Fishman, and S. F. Bent, Langmuir, 20 (2004) 4155-4161.

"Pushing the limits of artificial vision," N. Z. Mehenti, H. A. Fishman, and S. F. Bent, IEEE Potentials, Vol. 23, Feb.-March 2004, pp. 21-23.

"The artificial synapse chip: a flexible retinal interface based on directed retinal cell growth and neurotransmitter stimulation," M. C. Peterman, N. Z. Mehenti, K. V. Bilbao, C. J. Lee, T. Leng, J. Noolandi, S. F. Bent, M. S. Blumenkranz, and H. A. Fishman, Artificial Organs, (Special Issue on Retinal Prosthetics), 27 (2003) 975-985.

"Reactions of nitriles at semiconductor surfaces," C. Mui, M. A. Filler, S. F. Bent, and C. B. Musgrave, J. Phys. Chem. B, 107 (2003) 12256-12267.

"The study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry," M. A. Worsley, S. F. Bent, S. M. Gates, K. Kumar, T. Dalton, and J. C. Hedrick, Mater. Res. Soc. Symp. Proc, 766 (2003) E3.29.

"The surface as molecular reagent: organic chemistry at the semiconductor interface," M. A. Filler and S. F. Bent, Progress in Surface Surface, 73 (2003) 1-56.

"Localized neurotransmitter release for use in a prototype retinal interface," M. C. Peterman, D.M. Bloom, C. J. Lee, S, F. Bent, M. F. Marmor, M. S. Blumenkranz, and H. A. Fishman, Invest. Ophthalmol. Vis. Sci., 44 (2003) 3144-3149.

"Reaction of cyclic aliphatic and aromatic amines on Ge(100)-2x1 and Si(100)-2x1," G. T. Wang, C. Mui, J. F. Tannaci, M. A. Filler, C. B. Musgrave, and S. F. Bent, J. Phys. Chem. B, 107 (2003) 4982.

"Competition and selectivity in the reaction of nitriles on Ge(100)-2x1," M. A. Filler, C. Mui, C. B. Musgrave, and S. F. Bent, J. Am. Chem. Soc, 125 (2003) 4928.

"Detecting reactive species in hot-wire chemical vapor deposition," H. L. Duan, G. A. Zaharias, and S. F. Bent, Current Opinion in Solid State and Materials Science, 6 (2002) 471.

"Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2x1 and Ge(100)-2x1," G. T. Wang, C. Mui, C. B. Musgrave, and S. F. Bent, J. Am. Chem. Soc, 124 (2002) 8990.

"Effect of filament material on the decomposition of SiH4 in hot wire CVD of Si-based films," H. L. Duan, G. A. Zaharias, and S. F. Bent, Mater. Res. Soc. Symp. Proc, 715 (2002) A15.5.1.

"Microcontact printing on human tissue for retinal cell transplantation," C. J. Lee, P. Huie, T. Leng, M. C. Peterman, M. F. Marmor, M. S. Blumenkranz, S. F. Bent, H. A. Fishman, Archives of Ophthalmology, 120 (2002) 1714.

"Proton transfer reactions on semiconductor surfaces," C. Mui, J. H. Han, G. T. Wang, C. B. Musgrave, and S. F. Bent, J. Am. Chem. Soc., 124 (2002) 4027.

"Attaching organic layers to semiconductor surfaces," S. F. Bent, J. Phys. Chem., Feature Article, 106 (2002) 2830.

"Organic functionalization of group IV semiconductor surfaces: principles, examples, applications, and prospects," S. F. Bent, Surf. Sci, 500 (2002) 879.

"Example of a thermodynamically controlled reaction on a semiconductor surface: acetone on Ge(100)-2x1," G. T. Wang, C. Mui, C. B. Musgrave, and S. F. Bent, J. Phys. Chem. B, 105 (2001) 12559.

"Pi-bond versus radical character of the diamond (100)-2x1 surface," J. N. Russell, Jr., J. E. Butler, G. T. Wang, S. F. Bent, J. S. Hovis, R. J. Hamers, and M. P. D'Evelyn, Materials Chemistry and Physics, 72 (2001) 147-151.

"The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane," H. Duan, G. A. Zaharias, and S. F. Bent, Thin Solid Films, 395 (2001) 36.

"Identification of growth precursors in hot wire CVD of amorphous silicon films," H. L. Duan, G. A. Zaharias, and S. F. Bent, Mater. Res. Soc. Symp. Proc., 664 (2001) A3.1.

"Reactions of methylamines at the Si(100)-2x1 surface," C. Mui, G. T. Wang, S. F. Bent and C. B. Musgrave, J. Chem. Phys., 114 (2001) 10170.

"Chemical engineering: poised for progress," S. F. Bent, Chemical & Engineering News, March 26, 2001 Issue, 79 (2001) 58, invited.

"The effect of a methyl protecting group on the adsorption of pyrrolidine on Si(100)-2x1," G. T. Wang, C. Mui, C. B. Musgrave, and S. F. Bent, J. Phys. Chem. B, 105 (2001) 3295.

"Probing radicals in hot wire decomposition of silane using single photon ionization," H. Duan, G. A. Zaharias, and S. F. Bent, Appl. Phys. Lett., 78 (2001) 1784.

"Temperature effects in the hot wire chemical vapor deposition of a-SiC:H," M.-S. Lee and S. F. Bent, J. Appl. Phys., 87 (2000) 4600.

"Interaction of C6 cyclic hydrocarbons with a Si(100)-2x1 surface: adsorption and hydrogenation reactions," M. J. Kong, A. V. Teplyakov, J. Jagmohan, J. G. Lyubovitsky, C. Mui, and S. F. Bent, J. Phys. Chem. B, 104 (2000) 3000.

"A theoretical study of the structure and thermochemistry of 1,3-butadiene on the Ge/Si(100)-2x1 surface," C. Mui, S. F. Bent, and C. B. Musgrave, J. Phys. Chem. A, 104 (2000) 2457.

"Functionalization of diamond(100) by Diels-Alder chemistry," G. T. Wang, S. F. Bent, J. N. Russell, Jr., J. E. Butler, and M. P. D'Evelyn, J. Am. Chem. Soc., 122 (2000) 744.

"In situ diagnostics of methane/hydrogen plasma interactions with Si(100)," H. L. Duan and S. F. Bent, Mater. Res. Soc. Symp. Proc., 569 (1999) 179.

"Cycloaddition of cyclopentadiene and dicyclopentadiene on Si(100)-2x1: comparison of monomer and dimer adsorption," G. T. Wang, C. Mui, C. B. Musgrave, and S. F. Bent, J. Phys. Chem. B, 103 (1999) 6803.

"Adsorption of ethylene on the Ge(100)-2x1 surface: coverage and time-dependent behavior," P. Lal, A. V. Teplyakov, Y. Noah, M. J. Kong, G. T. Wang, and S. F. Bent, J. Chem. Phys., 110 (1999) 10545.

"NEXAFS studies of adsorption and reaction of benzene on Si(100)-2x1," M. J. Kong, A. V. Teplyakov, J. G. Lyubovitsky, and S. F. Bent, Surf. Sci., 411 (1998) 286.

"Temperature-dependent studies of a-SiC:H growth by remote plasma CVD using methylsilanes," M.-S. Lee, P. Lal, and S. F. Bent, Mater. Res. Soc. Symp. Proc., 495 (1998) 153.

"Evidence for a retro-Diels-Alder reaction on a single crystal surface: butadienes on Ge(100)," A. V. Teplyakov, P. Lal, Y. A. Noah, and S. F. Bent, J. Am. Chem. Soc., 120 (1998) 7376.

"Spectroscopic and thermal studies of a-SiC:H film growth: comparison of mono-, tri-, and tetramethylsilane," M.-S. Lee and S. F. Bent, J. Vac. Sci. Technol. A 16 (1998) 1658.

"Diels-Alder reactions of butadienes with the Si(100)-2x1 surface as a dienophile: vibrational spectroscopy, thermal desorption and near edge X-ray absorption fine structure studies," A. V. Teplyakov, M. J. Kong, and S. F. Bent, J. Chem. Phys., 108 (1998) 4599.

"Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films," C.-M. Chiang, S. M. Gates, S. S. Lee, M. J. Kong, and S. F. Bent, J. Phys. Chem. B 101 (1997) 9537.

"Vibrational spectroscopic studies of Diels-Alder reactions with the Si(100)-2x1 surface as a dienophile," A. V. Teplyakov, M. J. Kong, and S. F. Bent, J. Amer. Chem. Soc., 119 (1997) 11098.

"Bonding and thermal reactivity in thin a-SiC:H films grown by methylsilane CVD," M.-S. Lee and S. F. Bent, J. Phys. Chem. B 101 (1997) 9195.

"Infrared spectroscopy of methyl groups on silicon," M. J. Kong, S. S. Lee, J. G. Lyubovitsky, and S. F. Bent, Chem. Phys. Lett. 263 (1996) 1.

"Infrared study of reactions of atomic deuterium with amorphous silicon monohydride," S. S. Lee, M. J. Kong, S. F. Bent, C.-M. Chiang, and S. M. Gates, J. Phys. Chem. 100 (1996) 20015.

"Hydrogen recombinative desorption dynamics," S. F. Bent, H. A. Michelsen, and R. N. Zare, Laser Spectroscopy and Photochemistry on Metal Surfaces, H.-L. Dai and W. Ho, Eds.(World Scientific, New Jersey, 1995).

"Photoluminescence studies of self-assembled phenylene vinylene oligomer films," S. F. Shane (Bent), W. L. Wilson, H. E. Katz, M. L. Schilling, and S. Ungashe, Polym. Prepr. (Am. Chem. Soc., Div. Polym. Chem.) 35 (1994) 315.

"Synthesis, layer assembly, and fluorescence dynamics of poly(phenylene vinylene) oligomer phosphonates," H. E. Katz, S. F. Bent, W. L. Wilson, M. L. Schilling, and S. Ungashe, J. Am. Chem. Soc. 116 (1994) 6631.

"Synthesis, layer assembly, and fluorescence dynamics of poly(phenylene vinylene) oligomer phosphonates," H. E. Katz, S. F. Shane (Bent), W. L. Wilson, M. L. Schilling, and S. B. Ungashe, Mater. Res. Soc. Symp. Proc. 328 (1994) 361.

"Structural characterization of self-assembled multilayers by FTIR," S. F. Bent, M. L. Schilling, W. L. Wilson, H. E. Katz and A. L. Harris, Chem. Mater. 6 (1994) 122.

"Structural studies of zirconium alkylphosphonate monolayers and multilayer assemblies," M. L. Schilling, H. E. Katz, S. M. Stein, S. F. Shane (Bent), W. L. Wilson, S. B. Ungashe, G. N. Taylor, T. M. Putvinski, and C. E. D. Chidsey, Langmuir 9 (1993) 2156.

"Control of polarity and supramolecular optical effects in rigid surface assemblies," H. E. Katz, M. L. Schilling, S. B. Ungashe, S. Shane (Bent), G. Scheller, and W. L. Wilson, Polym. Prepr. (Am. Chem. Soc., Div. Polym. Chem.) 34 (1993) 793.

"Internal-state distributions of H2 desorbed from mono- and dihydride species on Si(100)," S. F. Shane (Bent), K. W. Kolasinski, and R. N. Zare, J. Chem. Phys. 97 (1992) 3704.

"Recombinative desorption of H2 on Si(100)-(2x1) and Si(111)-(7x7): comparison of internal state distributions," S. F. Shane (Bent), K. W. Kolasinski, and R. N. Zare, J. Chem. Phys. 97 (1992) 1520.

"A state-specific study of hydrogen desorption from Si(100)-(2x1): comparison of disilane and hydrogen adsorption," S. F. Shane (Bent), K. W. Kolasinski, and R. N. Zare, J. Vac. Sci. Technol. A 10 (1992) 2287.

"Internal-state distributions of recombinative hydrogen desorption from Si(100)," K. W. Kolasinski, S. F. Shane (Bent), and R. N. Zare, J. Chem. Phys. 96 (1992) 3995.

"Probing the dynamics of hydrogen recombination on Si(100)," K. W. Kolasinski, S. F. Shane (Bent), and R. N. Zare, J. Chem. Phys. 95 (1991) 5482.

"Vibrational energy transfer to metal surfaces probed by sum generation: CO/Cu(100) and CH3S/Ag(111)," A. L. Harris, N. J. Levinos, L. Rothberg, L. H. Dhar, S. F. Shane (Bent), and M. Morin, J. Electron Spectrosc. Related Phenom. 54/55 (1990) 5.

"Surface vibrational energy relaxation by coupling to electron-hole pairs: c(2x2)-CO/Cu(100)," S. F. Shane (Bent), L. Rothberg, L. H. Dubois, N. J. Levinos, M. Morin, and A. L. Harris, Proceedings of the VIIth Topical Meeting on Ultrafast Phenomena, (Springer, New York, 1990).

"Rotational population and alignment distributions for inelastic scattering and trapping/desorption of NO on Pt(111)," D. C. Jacobs, K. W. Kolasinski, S. F. Shane (Bent), and R. N. Zare, J. Chem. Phys. 91 (1989) 3182.

"Ultraviolet photodissociation and thermochemistry of CH2BrCH2I, CF2BrCF2I and CF2ICF2I," G. M. Nathanson, T. K. Minton, S. F. Shane (Bent), and Y. T. Lee, J. Chem. Phys. 90 (1989) 6157.

"The electronic state-selective photodissociation of CH2BrI at 248, 210, and 193 nm," L. J. Butler, E. J. Hintsa, S. F. Shane (Bent), and Y. T. Lee, J. Chem. Phys. 86 (1987) 2051.

Skip to another year: